Ukucwangciswa koomatshini beekhemikhali(CMP) yinkqubo esisiseko kwimveliso ye-semiconductor ephucukileyo. Inika ukuqina kwinqanaba le-athomu kwiindawo ze-wafer, ivumela uyilo lwe-multilayer, ukupakisha izixhobo eziqinileyo, kunye nemveliso ethembekileyo ngakumbi. I-CMP idibanisa iintshukumo zamakhemikhali kunye nezoomatshini ngaxeshanye—isebenzisa i-rotation pad kunye ne-slurry ekhethekileyo yokupolisha—ukususa iifilimu ezigqithisileyo kunye nokungahambi kakuhle komphezulu, okubalulekileyo ekusetyenzisweni kweempawu kunye nokulungelelaniswa kwiisekethe ezidibeneyo.
Umgangatho we-wafer emva kwe-CMP uxhomekeke kakhulu kulawulo olucokisekileyo lokwakheka kwe-slurry yokupolisha kunye neempawu zayo. I-slurry iqulethe amasuntswana arhabaxa, afana ne-cerium oxide (CeO₂), axhonywe kwi-cocktail yeekhemikhali ezenzelwe ukuphucula zombini ukurhawuzelelwa ngokomzimba kunye namazinga okusabela kweekhemikhali. Umzekelo, i-cerium oxide inika ubulukhuni obufanelekileyo kunye ne-chemistry yomphezulu kwiifilimu ezisekwe kwi-silicon, okwenza ibe yinto ekhethwayo kwizicelo ezininzi ze-CMP. Ukusebenza kwe-CMP akulawulwa kuphela ziimpawu zesuntswana ezirhabaxa kodwa kukwalawulwa ngokuchanekileyo koxinzelelo lwe-slurry, i-pH, kunye noxinano.
Ukucwangciswa kweeKhemikhali zoMatshini
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Iziseko zePolying Slurries kwiMveliso yeSemiconductor
Iislurry zokupolisha zibalulekile kwinkqubo yokucwangciswa kweekhemikhali. Ziyimixube eyinkimbinkimbi eyenzelwe ukufezekisa ukukrazulwa koomatshini kunye nokuguqulwa komphezulu weekhemikhali kwiindawo ze-wafer. Iindima ezibalulekileyo ze-slurry ze-CMP ziquka ukususwa kwezinto ngokufanelekileyo, ulawulo lwe-planarity, ukufana kwiindawo ezinkulu ze-wafer, kunye nokunciphisa iziphene.
Iindima kunye neeNzakhi zePolries zokuPolisha
I-slurry eqhelekileyo ye-CMP inamasuntswana arhabaxa axhonywe kwi-matrix yolwelo, ongezwe zizithako zeekhemikhali kunye neziqinisi. Icandelo ngalinye lidlala indima eyahlukileyo:
- Izinto zokurhawuzelela:Ezi particles zincinci, ziqinileyo—ngokuyintloko i-silica (SiO₂) okanye i-cerium oxide (CeO₂) kwizicelo ze-semiconductor—zenza inxalenye yoomatshini yokususwa kwezinto. Uxinzelelo lwazo kunye nokusasazwa kobungakanani beparticle kulawula zombini izinga lokususwa kunye nomgangatho womphezulu. Umxholo orhabaxa uhlala uphakathi kwe-1% ukuya kwi-5% ngobunzima, kunye nobubanzi beparticle phakathi kwe-20 nm kunye ne-300 nm, obucaciswe kakuhle ukuze kuthintelwe ukukrwela i-wafer kakhulu.
- Izongezo zeKhemikhali:Ezi arhente ziseka imeko-bume yeekhemikhali ukuze kubekho ulungelelwaniso olusebenzayo. Ii-oxidizer (umz., i-hydrogen peroxide) zinceda ukwakheka kweengqimba zomhlaba ezilula ukuzisusa. Iiarhente ezidibanisa okanye ezichebayo (ezifana ne-ammonium persulfate okanye i-citric acid) zibopha ii-ion zesinyithi, ziphucula ukususwa kunye nokuthintela ukwakheka kweziphene. Ii-inhibitors zifakwa ukuthintela ukugrunjwa okungafunekiyo kweengqimba ze-wafer ezikufutshane okanye ezingaphantsi, ziphucula ukukhetha.
- Izinto zokuzinzisa:Ii-surfactants kunye nee-pH buffers zigcina uzinzo lwe-slurry kunye nokusasazeka okufanayo. Ii-surfactants zithintela i-abrasive agglomeration, ziqinisekisa amazinga okususwa afanayo. Ii-pH buffers zivumela amazinga okusabela kweekhemikhali ahambelanayo kwaye zinciphisa amathuba okuqhekeka kwamasuntswana okanye ukubola.
Ukwakheka kunye noxinzelelo lwecandelo ngalinye lulungiselelwe izinto ezithile ze-wafer, ulwakhiwo lwesixhobo, kunye nenyathelo lenkqubo elibandakanyekayo kwinkqubo yokucwangciswa kweekhemikhali.
IiSlurries eziqhelekileyo: I-Silica (SiO₂) vs i-Cerium Oxide (CeO₂)
Izithambisi zokupolisha zeSilica (SiO₂)Zilawula amanyathelo okucwangcisa i-oxide, njenge-interlayer dielectric (ILD) kunye ne-shallow trench isolation (STI) polishing. Zisebenzisa i-colloidal okanye i-fumed silica njenge-abrasives, rhoqo kwindawo esisiseko (pH ~10), kwaye ngamanye amaxesha zongezwa nge-surfactants ezincinci kunye ne-corrosion inhibitors ukunciphisa iziphene zokukrwela kunye nokuphucula amazinga okususa. Ii-silica particles zixabiswa ngobukhulu bazo obufanayo kunye nobunzima obuphantsi, zibonelela ngokususwa kwezinto okuthambileyo, okufanayo okufanelekileyo kwiileya ezibuthathaka.
Izithambisi zokupolisha zeCerium oxide (CeO₂)zikhethwa kwizicelo ezinzima ezifuna ukukhetha okuphezulu kunye nokuchaneka, njengokupholisha i-substrate yokugqibela yeglasi, i-advanced substrate planarization, kunye nee-oxide layers ezithile kwizixhobo ze-semiconductor. Ii-CeO₂ abrasives zibonisa i-reactivity ekhethekileyo, ngakumbi nge-silicon dioxide surfaces, nto leyo evumela zombini iindlela zokususa iikhemikhali kunye noomatshini. Le ndlela yokusebenza kabini inika amazinga aphezulu e-planarization kumanqanaba aphantsi e-defect, okwenza i-CeO₂ slurries ikhetheke kwiglasi, ii-hard disk substrates, okanye ii-nodes zesixhobo se-logic eziphambili.
Injongo Yokusebenza Kwezinto Ezirhabaxa, Izongezo, kunye Nezinto Ezizinzisayo
- Ii-Abrasives: Yenza ukukrazula ngoomatshini. Ubungakanani bazo, imilo, kunye noxinzelelo zilawula izinga lokususwa kunye nokugqitywa komphezulu. Umzekelo, ii-silica abrasives ezifanayo ezingama-50 nm ziqinisekisa ukulungelelaniswa okuthambileyo, okulinganayo kwee-oxide layers.
- Izongezo zeKhemikhali: Vumela ukususwa okukhethiweyo ngokuncedisa ukunyibilika komphezulu kunye nokunyibilika. Kwi-CMP yobhedu, i-glycine (njenge-complexing agent) kunye ne-hydrogen peroxide (njenge-oxidizer) zisebenza ngokubambisana, ngelixa i-BTA isebenza njengomthinteli okhusela iimpawu zobhedu.
- Izinzisi: Gcina ulwakhiwo lwe-slurry lufana ngokuhamba kwexesha. Izinto ezibangela ukudumba zithintela ukudumba kunye nokuhlangana, ziqinisekisa ukuba amasuntswana arhabaxa ahlala esasazeka kwaye afumaneka kwinkqubo.
Iimpawu ezizodwa kunye neemeko zokusetyenziswa: ii-CeO₂ kunye ne-SiO₂ Slurries
I-CeO₂ polishing slurryInika ukhetho oluphezulu phakathi kweglasi kunye ne-silicon oxide ngenxa yendlela esebenza ngayo ngokwekhemikhali. Isebenza ngokukodwa ekucwangciseni ii-substrates eziqinileyo nezibuthathaka okanye ii-composite oxide stacks apho ukhetho oluphezulu lwezinto lubalulekile. Oku kwenza i-CeO₂ slurries ibe yinto eqhelekileyo ekulungiseleleni i-substrate ephucukileyo, ukugqitywa kweglasi echanekileyo, kunye namanyathelo athile e-shallow trench isolation (STI) CMP kushishino lwe-semiconductor.
I-SiO₂ polishing slurryIbonelela ngomxube olungeleleneyo wokususwa koomatshini kunye neekhemikhali. Isetyenziswa kakhulu kwi-bulk oxide kunye ne-interlayer dielectric planarization, apho kufuneka khona ukuphuma okuphezulu kunye nokungasebenzi kakuhle. Ubungakanani obufanayo, obulawulwayo be-silica bukwathintela ukuveliswa kwemikrwelo kwaye buqinisekisa umgangatho ophezulu womphezulu.
Ukubaluleka koBukhulu beeNgcawu kunye nokuSasazwa kwazo ngokufanayo
Ubungakanani bamasuntswana kunye nokufana kokusasazeka kubalulekile ekusebenzeni kodaka. Amasuntswana arhabaxa afanayo, anesikali se-nanometer aqinisekisa amazinga okususwa kwezinto kunye nomphezulu we-wafer ongenaziphene. Ukuhlangana kukhokelela ekukrweleni okanye ekupolisheni okungalindelekanga, ngelixa ukusasazwa kobukhulu obubanzi kubangela ukucwangciswa okungalinganiyo kunye nokwanda koxinano lweziphene.
Ulawulo olusebenzayo loxinzelelo lwe-slurry—olujongwa ziiteknoloji ezifana ne-slurry density meter okanye izixhobo zokulinganisa i-slurry density density ze-ultrasonic—luqinisekisa ukulayisha okurhabaxa rhoqo kunye neziphumo zenkqubo ezinokuqikelelwa, ezichaphazela ngokuthe ngqo isivuno kunye nokusebenza kwesixhobo. Ukufezekisa ulawulo oluchanekileyo loxinano kunye nokusasazwa okufanayo ziimfuno eziphambili zokufakelwa kwezixhobo ze-chemical mechanical planarization kunye nokwenza ngcono inkqubo.
Ngamafutshane, ukwenziwa kwe-polishing slurries—ingakumbi ukhetho kunye nolawulo lohlobo lwe-abrasive, ubungakanani be-particle, kunye neendlela zokuzinzisa—kuxhasa ukuthembeka kunye nokusebenza kakuhle kwenkqubo ye-chemical mechanical planarization kwizicelo zoshishino lwe-semiconductor.
Ukubaluleka koKulinganiswa koBuninzi beSlurry kwi-CMP
Kwinkqubo yokucwangcisa iikhemikhali ngoomatshini, ukulinganisa ngokuchanekileyo kunye nokulawula uxinano lwe-slurry kuchaphazela ngokuthe ngqo ukusebenza kakuhle kunye nomgangatho wokupolisha i-wafer. Uxinano lwe-slurry—uxinano lwee-abrasive particles ngaphakathi kwe-slurry yokupolisha—lusebenza njenge-central process lever, lubumba isantya sokupolisha, umgangatho wokugqibela womphezulu, kunye nemveliso iyonke ye-wafer.
Ubudlelwane Phakathi koBuninzi beSlurry, Izinga lokuPolisha, Umgangatho woMphezulu, kunye neWafer Yield
Uxinzelelo olurhabaxa lwe-particles ngaphakathi kwe-CeO₂ polishing slurry okanye olunye uhlobo lwe-polishing slurry lumisela ukuba izinto zisuswa ngokukhawuleza kangakanani kumphezulu we-wafer, odla ngokubizwa ngokuba yi-removal rate okanye i-material removal rate (MRR). Uxinano oluphezulu lwe-slurry ngokubanzi lunyusa inani le-abrasive contacts kwindawo nganye, nto leyo ekhawulezisa i-polishing rate. Umzekelo, uphando olulawulwayo luka-2024 lubike ukuba ukunyusa i-silica particle concentration ukuya kwi-5 wt% kwi-colloidal slurry kwandisa amazinga okususa kwi-200 mm silicon wafers. Nangona kunjalo, olu lwalamano alukho ngqo—kukho indawo yokuncipha kwembuyekezo. Kwi-slurry densities ephezulu, i-particle agglomeration ibangela i-plateau okanye ukwehla kwizinga lokususa ngenxa yokuphazamiseka kokuhamba kobunzima kunye nokwanda kwe-viscosity.
Umgangatho womphezulu uvakalelwa ngokulinganayo kuxinano lwe-slurry. Xa kugxilwe kakhulu, iziphene ezifana nemikrwelo, inkunkuma efakwe ngaphakathi, kunye nemingxunya ziba zixhaphake kakhulu. Olu phononongo lukwabonile ukunyuka okuthe tye koburhabaxa bomphezulu kunye noxinano olukhulu lokukrwela xa kwandiswa uxinano lwe-slurry ngaphezu kwe-8–10 wt%. Ngokwahlukileyo koko, ukunciphisa uxinano kunciphisa umngcipheko weziphene kodwa kunokucothisa ukususwa kwaye kubeke emngciphekweni ulungelelwaniso.
Isivuno se-wafer, umlinganiselo wee-wafers ezihlangabezana neempawu zenkqubo emva kokupholisha, ulawulwa zezi ziphumo zidibeneyo. Amanqanaba aphezulu eziphene kunye nokususwa okungafanelanga zombini zinciphisa isivuno, nto leyo egxininisa ibhalansi ebuthathaka phakathi kokuphuma kunye nomgangatho kwimveliso yanamhlanje ye-semiconductor.
Impembelelo yokuguquguquka koxinzelelo oluncinci lwe-slurry kwiNkqubo ye-CMP
Nokuba ukuphambuka okuncinci ukusuka kuxinano oluchanekileyo lwe-slurry—iinxalenye zepesenti—kunokuchaphazela kakhulu imveliso yenkqubo. Ukuba uxinano olurhabaxa ludlula kwindawo ekujoliswe kuyo, ukuhlanganiswa kwamasuntswana kunokwenzeka, okukhokelela ekugugeni ngokukhawuleza kwiipads nakwiidiski zokulungisa, amazinga aphezulu okukrwela komphezulu, kunye nokuvaleka okanye ukubola kwezinto ezinamanzi kwizixhobo zokucwangcisa izixhobo zekhemikhali. Uxinano olungaphantsi lunokushiya iifilimu ezisele kunye ne-topografiya yomphezulu engacwangciswanga, ezibangela umngeni kumanyathelo alandelayo e-photolithography kwaye zinciphise isivuno.
Utshintsho kubuninzi be-slurry lukwachaphazela ukusabela kweekhemikhali-kwe-mechanical kwi-wafer, kunye nemiphumo esezantsi kwisiphako kunye nokusebenza kwesixhobo. Umzekelo, amasuntswana amancinci okanye angasasazeki ngokufanayo kwi-slurry exutyiweyo achaphazela amazinga okususwa kwendawo, okudala i-microtopography enokwanda njengeempazamo zenkqubo kwimveliso ephezulu. Ezi zinto zincinci zifuna ulawulo oluqinileyo lwe-slurry kunye nokubeka esweni okuqinileyo, ngakumbi kwiindawo eziphambili.
Ukulinganisa kunye nokuphucula uxinano lweSlurry ngexesha langempela
Ukulinganiswa kwexesha langempela koxinano lwe-slurry, okuvunyelwe ngokusetyenziswa kweemitha zoxinano olungaphakathi—ezifana neemitha zoxinano lwe-slurry ze-ultrasonic ezenziwe yiLonnmeter—ngoku ziqhelekile kwizicelo eziphambili kushishino lwe-semiconductor. Ezi zixhobo zivumela ukujonga ngokuqhubekayo iiparameter ze-slurry, zibonelela ngempendulo ekhawulezileyo malunga nokuguquguquka koxinano njengoko i-slurry ihamba kwiiseti zezixhobo ze-CMP kunye neenkqubo zokusasaza.
Iingenelo eziphambili zokulinganisa uxinano lwe-slurry ngexesha langempela ziquka:
- Ukufunyanwa kwangoko kweemeko ezingachazwanga, ukuthintela ukwanda kweziphene ngeenkqubo ezibizayo ezisezantsi
- Ukulungiswa kwenkqubo—kuvumela iinjineli ukuba zigcine ifestile efanelekileyo yoxinano lwe-slurry, ziphucula izinga lokususa ngelixa zinciphisa iziphene
- Ukuphuculwa kwe-wafer ukuya kwi-wafer kunye nokuhambelana kwe-lot-to-lot, okuguqula isivuno esiphezulu sokwenziwa kwayo
- Impilo yezixhobo ixesha elide, njengoko amaxolo axineneyo kakhulu okanye angaxineneyo ngokwaneleyo anokukhawulezisa ukuguguleka kwee-polishing pads, ii-mixers, kunye neepayipi zokusasaza
Ukufakwa kwezixhobo ze-CMP kudla ngokuthumela iilophu zesampulu okanye imigca yokujikeleza ijikeleza kwindawo yokulinganisa, ukuqinisekisa ukuba ukufundwa koxinano kubonakalisa ukuhamba kokwenyani okuziswa kwiiwafers.
Ichanekile kwaye iyasebenza ngexesha langempelaumlinganiselo woxinano lwe-slurryYenza umqolo weendlela zokulawula uxinano lwe-slurry eziqinileyo, zixhasa zombini iindlela ezisetyenzisiweyo nezintsha zokupolisha i-slurry, kubandakanya i-slurry ze-Cerium oxide (CeO₂) ezinzima kwi-interlayer ephucukileyo kunye ne-oxide CMP. Ukugcina le parameter ibalulekileyo kunxibelelana ngokuthe ngqo nemveliso, ulawulo lweendleko, kunye nokuthembeka kwesixhobo kuyo yonke inkqubo yokucwangcisa iikhemikhali.
Imigaqo kunye neeTekhnoloji zokulinganisa uxinano lweSlurry
Uxinano lwe-slurry luchaza ubunzima bezinto eziqinileyo ngeyunithi nganye kwi-slurry yokupolisha, njenge-Cerium oxide (CeO₂) formulations ezisetyenziswa kwi-chemical mechanical planarization (CMP). Olu tshintsho lumisela amazinga okususwa kwezinto, ukufana kwemveliso, kunye namanqanaba eziphene kwii-wafers ezipolishiweyo. Ukulinganiswa koxinano lwe-slurry olusebenzayo kubalulekile kulawulo oluphambili loxinano lwe-slurry, oluchaphazela ngokuthe ngqo isivuno kunye nokungasebenzi kakuhle kwizicelo zoshishino lwe-semiconductor.
Uluhlu lweemitha zoxinano lwe-slurry luyasetyenziswa kwimisebenzi ye-CMP, nganye isebenzisa imigaqo eyahlukeneyo yokulinganisa. Iindlela ze-gravimetric zixhomekeke ekuqokeleleni nasekulinganiseni umthamo we-slurry ochaziweyo, zibonelela ngokuchaneka okuphezulu kodwa zingenawo amandla okusebenza ngexesha langempela kwaye zenze ukuba zingasebenzi ukusetyenziswa rhoqo kwiindawo zokufakela izixhobo ze-CMP. Iimitha zoxinano lwe-electromagnetic zisebenzisa amasimi e-electromagnetic ukugqiba uxinano ngokusekelwe kutshintsho kwi-conductivity kunye ne-permittivity ngenxa yamasuntswana abrasive amiswe. Iimitha zokungcangcazela, ezifana ne-vibrating tube densitometers, zilinganisa impendulo ye-frequency yetyhubhu ezaliswe yi-slurry; utshintsho kwi-density luchaphazela i-vibration frequency, okuvumela ukujonga okuqhubekayo. Ezi teknoloji zixhasa ukujonga ngaphakathi kodwa zinokuba novelwano kwiinguqu ze-fouling okanye zeekhemikhali.
Iimitha zoxinano lwe-slurry ze-ultrasonic zimele inkqubela phambili kwezobuchwepheshe yokujonga uxinano ngexesha langempela kwi-chemical-mechanical planarization. Ezi zixhobo zikhupha amaza e-ultrasonic kwi-slurry kwaye zilinganisa ixesha lokubhabha okanye isantya sokusasazeka kwesandi. Isantya sesandi kwindawo ephakathi sixhomekeke kuxinano lwaso kunye noxinzelelo lwezinto eziqinileyo, okuvumela ukuqinisekiswa ngokuchanekileyo kweempawu ze-slurry. Indlela ye-ultrasonic ifanelekile kakhulu kwiindawo ezirhabaxa nezinoburhalarhume eziqhelekileyo kwi-CMP, njengoko ingaphazamisi kwaye inciphisa ukungcola kwe-sensor xa kuthelekiswa neemitha zoqhagamshelwano ngqo. I-Lonnmeter yenza iimitha zoxinano lwe-slurry ze-ultrasonic ezikwi-inline ezenzelwe imigca ye-CMP yeshishini le-semiconductor.
Iingenelo zeemitha zoxinano lwe-slurry ze-ultrasonic ziquka:
- Ukulinganisa okungangeneleliyo: Iisensors zihlala zifakwa ngaphandle okanye ngaphakathi kweeseli zokuhamba kwe-bypass, zinciphisa ukuphazamiseka kokutyibilika kwaye ziphephe ukugruzuka kweendawo zokuva.
- Ubuchule bexesha langempela: Ukuphuma okuqhubekayo kwenza ukuba uhlengahlengiso lwenkqubo lukhawuleze, ukuqinisekisa ukuba uxinano lwe-slurry luhlala ngaphakathi kweeparamitha ezichaziweyo zomgangatho ophezulu wokupholisha i-wafer.
- Ukuchaneka okuphezulu kunye nokuqina: Iiskena ze-Ultrasonic zibonelela ngokufundwa okuzinzileyo nokuphindaphindwayo, ezingachaphazeleki yi-slurry chemistry eguquguqukayo okanye umthwalo weenxalenye phezu kofakelo olude.
- Ukuhlanganiswa nezixhobo ze-CMP: Uyilo lwazo luxhasa ukufakwa kofakelo kwimigca ye-slurry ejikelezayo okanye kwii-manifolds zokuhambisa, kulungelelanisa ulawulo lwenkqubo ngaphandle kwexesha elide lokungasebenzi.
Izifundo zamva nje kwimveliso ye-semiconductor zixela ukunciphisa ukungasebenzi kakuhle kwe-30% xa ukujonga uxinano lwe-ultrasonic olukwi-intanethi kuhambelana nokufakelwa kwezixhobo ze-chemical mechanical planarization zeenkqubo ze-Cerium oxide (CeO₂) polishing slurry. Impendulo ezenzekelayo evela kwiisensors ze-ultrasonic ivumela ulawulo oluqinileyo kwi-polishing slurry formulations, nto leyo ekhokelela ekuphuculweni kobungqingqwa kunye nokunciphisa inkunkuma yezinto. Iimitha zoxinano lwe-Ultrasonic, xa zidityaniswe nemigaqo yokulinganisa eqinileyo, zigcina ukusebenza okuthembekileyo xa kujongwa utshintsho lwe-slurry composition, oluhlala lukho kwimisebenzi ye-CMP ephucukileyo.
Ngamafutshane, ukulinganisa uxinano lwe-slurry ngexesha langempela—ingakumbi kusetyenziswa itekhnoloji ye-ultrasonic—kuye kwaba yeyona nto iphambili kwiindlela zokulawula uxinano lwe-slurry kwi-CMP. Ezi nkqubela phambili ziphucula ngokuthe ngqo isivuno, ukusebenza kakuhle kwenkqubo, kunye nomgangatho we-wafer kwishishini le-semiconductor.
Ukufakwa kunye nokuhlanganiswa kweenkqubo ze-CMP
Ukulinganisa uxinano olufanelekileyo lwe-slurry kubalulekile ekulawuleni uxinano lwe-slurry kwinkqubo yokucwangcisa iikhemikhali. Ukukhetha iindawo zokufakela ezisebenzayo zeemitha zoxinano lwe-slurry kuchaphazela ngokuthe ngqo ukuchaneka, uzinzo lwenkqubo, kunye nomgangatho we-wafer.
Izinto ezibalulekileyo zokukhetha amanqaku okufakela
Kwiisetingi ze-CMP, iimitha zoxinano kufuneka zibekwe ukuze zijonge ulusu olusetyenziswa ekupolisheni nge-wafer. Iindawo eziphambili zokufaka ziquka:
- Itanki yokubuyisela umbane:Ukubeka imitha kwindawo yokuphuma kunika ulwazi ngemeko yokutyibilika kwesiseko ngaphambi kokuba kusasazwe. Nangona kunjalo, le ndawo isenokungaluboni utshintsho olwenzeka ngezantsi, njengokwakheka kwamaqamza okanye iziphumo zobushushu bendawo.
- Iindlela zokuhambisa:Ukufakela emva kokuxuba iiyunithi nangaphambi kokungena kwii-manifolds zokusasazwa kuqinisekisa ukuba umlinganiselo wobuninzi ubonakalisa indlela yokugqibela yokwenza i-slurry, kuquka i-Cerium oxide (CeO₂) polishing slurry kunye nezinye izongezo. Le ndawo ivumela ukubonwa ngokukhawuleza kotshintsho loxinzelelo lwe-slurry ngaphambi kokuba kucutshungulwe ii-wafers.
- Ukubeka esweni indawo osetyenziswa kuyo:Indawo efanelekileyo ikufuphi ngqo nevalvu okanye isixhobo sokusetyenziswa. Oku kubamba uxinano lwe-slurry ngexesha langempela kwaye kwazisa abaqhubi malunga nokuphambuka kwiimeko zenkqubo ezinokuvela ekufudumaleni komgca, ukwahlulwahlulwa, okanye ukuveliswa kwama-microbubble.
Xa ukhetha iindawo zokufakela, izinto ezongezelelweyo ezifana nolawulo lokuhamba kwamanzi, ukujongwa kwemibhobho, kunye nokuba kufutshane neempompo okanye iivalvu kufuneka ziqwalaselwe:
- Ubabaloukufakwa ngokuthe nkqokunye nokuhamba okuya phezulu ukunciphisa ukuqokelelwa kwebhamuza yomoya kunye nesanti kwinto yokuva.
- Gcina iidayamitha ezininzi phakathi kwemitha kunye nemithombo ephambili yokuxinana (iipompo, iivalvu) ukuze uphephe iimpazamo zokufunda ngenxa yokuphazamiseka kokuhamba kwamanzi.
- Sebenzisaukulungiswa kokuhamba kwamanzi(izilungisi okanye iindawo zokuzola) zokuvavanya ukulinganiswa koxinano kwindawo ezinzileyo ye-laminar.
Imingeni Eqhelekileyo kunye Neendlela Ezilungileyo Zokudibanisa Izinzwa Ezinokuthenjwa
Iinkqubo ze-CMP slurry zibangela imingeni emininzi yokudibanisa:
- Ukungena komoya kunye namaQhwa:Iimitha zoxinano lwe-slurry ezisebenzisa i-ultrasonic zingakwazi ukufunda uxinano ngendlela engafanelekanga ukuba kukho ii-microbubbles. Kuphephe ukubeka ii-sensors kufutshane neendawo zokungena komoya okanye utshintsho lokuhamba ngequbuliso, oluqhele ukwenzeka kufutshane neendawo zokukhupha iipompo okanye iitanki zokuxuba.
- Ukutshatyalaliswa kwenkunkuma:Kwimigca ethe tye, ii-sensors zinokudibana nezinto eziqinileyo zokuzinza, ingakumbi nge-CeO₂ polishing slurry. Ukufakelwa ngokuthe nkqo okanye ukubeka ngaphezulu kweendawo ezinokwenzeka zokuzinza kuyacetyiswa ukuze kugcinwe ulawulo oluchanekileyo loxinano lwe-slurry.
- Ukungcola kweSensor:Ii-slurry ze-CMP ziqulathe izinto ezirhabaxa nezineekhemikhali ezinokukhokelela ekungcoleni okanye ekugqumeni i-sensor. Izixhobo ezikwi-Lonnmeter zenzelwe ukunciphisa oku, kodwa ukuhlolwa rhoqo kunye nokucoca kusabalulekile ukuze kuthembeke.
- Ukungcangcazela koomatshini:Ukubekwa kufutshane nezixhobo ezisebenzayo zoomatshini kunokubangela ingxolo ngaphakathi kwesensor, kwehlisa ukuchaneka kokulinganisa. Khetha iindawo zokufakela apho ukuvezwa kokungcangcazela kuncinci.
Ukuze ufumane iziphumo ezilungileyo zokudibanisa:
- Sebenzisa amacandelo okuhamba kwe-laminar xa ufaka.
- Qinisekisa ukuba ulungelelwano luthe nkqo naphi na apho kunokwenzeka khona.
- Ukubonelela ngokufikelela okulula kokugcinwa nokulinganiswa rhoqo.
- Hlukanisa izinzwa ekuphazamisekeni kokungcangcazela nokuhamba kwamanzi.
I-CMP
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Amaqhinga okulawula ukugxila kweSlurry
Ulawulo olusebenzayo loxinzelelo lwe-slurry kwinkqubo yokucwangciswa kweekhemikhali kubalulekile ukugcina amazinga okususa izinto ahambelanayo, ukunciphisa iziphene zomphezulu we-wafer, kunye nokuqinisekisa ukufana kuzo zonke ii-wafer ze-semiconductor. Iindlela ezahlukeneyo kunye netekhnoloji zisetyenziswa ukufezekisa olu chanekileyo, zixhasa zombini imisebenzi elungelelanisiweyo kunye nemveliso ephezulu yesixhobo.
Iindlela kunye nezixhobo zokugcina ugxininiso olufanelekileyo lwe-slurry
Ulawulo loxinzelelo lwe-slurry luqala ngokubeka esweni ngexesha langempela iinxalenye ezirhabaxa kunye neentlobo zeekhemikhali kwi-slurry yokupolisha. Kwi-slurry yokupolisha ye-Cerium oxide (CeO₂) kunye nezinye iindlela ze-CMP, iindlela ezithe ngqo ezifana nokulinganisa uxinano lwe-slurry ngaphakathi zibalulekile. Iimitha zoxinano lwe-slurry ze-Ultrasonic, ezifana nezo zenziwe yiLonnmeter, zibonelela ngemilinganiselo eqhubekayo yoxinano lwe-slurry, ehambelana kakhulu nomxholo oqinileyo kunye nokufana.
Iindlela ezongezelelweyo ziquka uhlalutyo lwe-turbidity—apho izinzwa ze-optical zibona ukusasazeka kwi-suspension abrasive particles—kunye neendlela ze-spectroscopic ezifana ne-UV-Vis okanye i-Near-Infrared (NIR) spectroscopy ukuze kulinganiswe ii-reactants eziphambili kumjelo we-slurry. Ezi zilinganiso zakha umqolo weenkqubo zolawulo lwenkqubo ye-CMP, ezivumela uhlengahlengiso oluphilayo ukugcina iifestile zoxinzelelo olujoliswe kuzo kunye nokunciphisa ukuguquguquka kwe-batch-to-batch.
Ii-sensors ze-electrochemical zisetyenziswa kwiifomyula ezityebileyo kwii-ion zesinyithi, ezibonelela ngolwazi olukhawulezayo malunga noxinzelelo oluthile lwe-ionic kwaye zixhasa ukulungiswa ngakumbi kwizicelo eziphambili zeshishini le-semiconductor.
IiLoops zeNgxelo kunye nokuZenzekelayo koLawulo oluValekileyo
Ukufakelwa kwezixhobo zokucwangcisa iikhemikhali-zoomatshini zanamhlanje kusebenzisa iinkqubo zokulawula ezivaliweyo ezidibanisa i-inline metrology neenkqubo zokuhambisa ezizenzekelayo. Idatha evela kwiimitha zoxinano lwe-slurry kunye nee-sensors ezinxulumene nayo inikwa ngqo kwi-programmable logic controllers (PLCs) okanye kwiinkqubo zolawulo ezisasazwayo (DCS). Ezi nkqubo zivuselela ngokuzenzekelayo iivalvu zokongeza amanzi okwenza i-make-up, i-concentrated slurry dosing, kunye ne-stabilizer injection, ukuqinisekisa ukuba inkqubo ihlala ngaphakathi kwe-envelope yokusebenza efunekayo ngamaxesha onke.
Olu lwakhiwo lwempendulo luvumela ukulungiswa okuqhubekayo kwazo naziphi na iimpazamo ezifunyenwe zizinzwa zexesha langempela, kuthintelwe ukuxutywa kakhulu, kugcinwe uxinano olufanelekileyo lwe-abrasive, kwaye kuncitshiswe ukusetyenziswa kweekhemikhali ezigqithisileyo. Umzekelo, kwisixhobo se-CMP esisebenza nge-high-throughput kwii-wafer nodes eziphambili, imitha yoxinano lwe-slurry ye-inline ultrasonic iya kubona ukwehla koxinano lwe-abrasive kwaye ngoko nangoko ibonise inkqubo yedosi yokwandisa ukungeniswa kwe-slurry, de uxinano lubuyele kwindawo yalo. Ngokwahlukileyo koko, ukuba uxinano olulinganisiweyo ludlula iinkcukacha, i-control logic iqala ukongezwa kwamanzi okuzenzela ukubuyisela uxinano oluchanekileyo.
Indima yokulinganisa uxinano ekulungiseni amanqanaba okongezwa kwamanzi kunye nodaka
Ukulinganisa uxinano lwe-slurry yeyona nto iphambili kulawulo olusebenzayo loxinano. Ixabiso loxinano elibonelelwa zizixhobo ezifana neemitha zoxinano ezikwi-inline density zikaLonnmeter lichaza ngokuthe ngqo iiparameter ezimbini ezibalulekileyo zokusebenza: umthamo wamanzi okwenziwa kunye nesantya sokutya kwe-slurry egxininisiweyo.
Ngokubeka imitha yoxinano kwiindawo ezibalulekileyo—njengangaphambi kokufakwa kwesixhobo se-CMP okanye emva komxube wendawo yokusetyenziswa—idatha yexesha langempela ivumela iinkqubo ezizenzekelayo ukuba zilungise izinga lokongeza amanzi okwenziwa, ngaloo ndlela zinciphise i-slurry kwiinkcukacha ezifunekayo. Kwangaxeshanye, inkqubo inokuguqula izinga lokutya kwe-slurry egxininisiweyo ukuze igcine uxinano olurhabaxa nolweekhemikhali ngokuchanekileyo, ibala ukusetyenziswa kwesixhobo, iziphumo zokwaluphala, kunye nokulahleka okubangelwa yinkqubo.
Umzekelo, ngexesha lokuqhuba okucwangcisiweyo kwezakhiwo ze-3D NAND, ukujonga uxinano oluqhubekayo kufumanisa ukuhlanganiswa kwe-slurry okanye iindlela zokuzinza, okubangela ukunyuka ngokuzenzekelayo kwamanzi okuzenzela okanye ukushukuma, njengoko kufuneka ukuze inkqubo izinze. Olu luhlu lolawulo olulawulwa ngokuqinileyo lusisiseko ekugcineni iithagethi eziqinileyo zokufana kwe-wafer ukuya kwi-wafer kunye ne-in-wafer, ngakumbi njengoko ubukhulu besixhobo kunye neefestile zenkqubo zincinci.
Ngamafutshane, amaqhinga okulawula uxinano lwe-slurry kwi-CMP axhomekeke kumxube wemilinganiselo ephucukileyo emgceni kunye neempendulo ezizenzekelayo ze-closed-loop. Iimitha zoxinano lwe-slurry, ngakumbi iiyunithi ze-ultrasonic ezifana nezo zivela eLonnmeter, zidlala indima ephambili ekunikezeni idatha enesisombululo esiphezulu, ngexesha elifanelekileyo efunekayo kulawulo lwenkqubo oluqinileyo kumanyathelo abalulekileyo okuvelisa i-semiconductor. Ezi zixhobo kunye neendlela zinciphisa ukuguquguquka, zixhasa ukuzinza ngokuphucula ukusetyenziswa kweekhemikhali, kwaye zivumela ukuchaneka okufunekayo kwiiteknoloji zanamhlanje ze-node.
Isikhokelo soKhetho lweeMeter zoBuxinano lweSlurry kwiShishini leSemiconductor
Ukukhetha imitha yoxinano lwe-slurry ye-chemical mechanical planarization (CMP) kwishishini le-semiconductor kufuna ingqalelo enonophelo kwiimfuno ezahlukeneyo zobugcisa. Iikhrayitheriya eziphambili zokusebenza kunye nokusetyenziswa ziquka uvakalelo, ukuchaneka, ukuhambelana ne-aggressive slurry chemistry, kunye nokulula kokuhlanganiswa kwiinkqubo zokuhanjiswa kwe-slurry ze-CMP kunye nokufakwa kwezixhobo.
Iimfuneko zoBuchule kunye nokuChaneka
Ulawulo lwenkqubo ye-CMP luxhomekeke kwiinguqu ezincinci kulwakhiwo lwe-slurry. Imitha yoxinano kufuneka ibone utshintsho oluncinci lwe-0.001 g/cm³ okanye ngaphezulu. Eli nqanaba lobuntununtunu libalulekile ekuchongeni notshintsho oluncinci kakhulu kumxholo orhabaxa—njengalowo ufumaneka kwi-CeO₂ polishing slurry okanye kwi-silica-based slurry—kuba ezi zichaphazela amazinga okususwa kwezinto, i-wafer planarity, kunye nokungasebenzi kakuhle. Uluhlu oluqhelekileyo lokuchaneka olwamkelekileyo lweemitha zoxinano lwe-slurry ze-semiconductor yi-±0.001–0.002 g/cm³.
Ukuhambelana ne-Aggressive Slurries
Iislurries ezisetyenziswa kwi-CMP zinokuqulatha ii-nanoparticles ezirhabaxa ezifana ne-cerium oxide (CeO₂), i-alumina, okanye i-silica, ezixhonywe kwiindawo ezisebenzayo ngamakhemikhali. Imitha yoxinano kufuneka imelane nokuvezwa ixesha elide kokukrala ngokomzimba nakwiindawo ezirhabaxa ngaphandle kokuphuma ekulinganisweni okanye ukungcoliswa. Izinto ezisetyenziswa kwiindawo ezimanzi kufuneka zingabi nabungozi kuzo zonke iikhemikhali zeslurry ezisetyenziswa rhoqo.
Ukulula kokudibanisa
Iimitha zoxinano lwe-slurry ezikwi-inline kufuneka zilungele ukufakwa kwezixhobo ze-CMP ezikhoyo. Izinto ekufuneka ziqwalaselwe ziquka:
- Umthamo omncinci wokufa kunye noxinzelelo oluphantsi ukuze kuthintelwe ukuhanjiswa kodaka.
- Inkxaso yoqhagamshelo oluqhelekileyo lweenkqubo zoshishino ukuze kufakwe kwaye kugcinwe ngokukhawuleza.
- Ukuhambelana kwemveliso (umz., imiqondiso ye-analog/yedijithali) yokudibanisa ngexesha langempela neenkqubo zokulawula uxinano lwe-slurry, kodwa ngaphandle kokubonelela ngezo nkqubo ngokwazo.
Iimpawu zokuthelekisa zeTekhnoloji zeSensor eziPhambili
Ulawulo loxinano lwe-polishing slurries lulawulwa ikakhulu ngeendidi ezimbini ze-sensor: iimitha ezisekwe kwi-densitometry kunye neemitha ezisekwe kwi-refractometry. Nganye izisa amandla afanelekileyo kwizicelo zoshishino lwe-semiconductor.
Iimitha ezisekwe kwi-Densitometry (umz., i-Ultrasonic Slurry Density Meter)
- Isebenzisa isantya sokusasazeka kwesandi kwi-slurry, enxulumene ngokuthe ngqo noxinano.
- Ibonelela ngolungelelwano oluphezulu lokulinganisa uxinano kuluhlu lwamanani oluxutyiweyo kunye neentlobo ezirhabaxa.
- Ifanelekile kakhulu kwiislurry zokupholisha ezibukhali, kuquka i-CeO₂ kunye ne-silica formulations, njengoko izinto zokuva zinokwenziwa zahlulwe ngokwasemzimbeni kwiikhemikhali.
- Uvakalelo oluqhelekileyo kunye nokuchaneka kuyahlangabezana nemfuneko engaphantsi kwe-0.001 g/cm³.
- Ukufakelwa kudla ngokuba ngaphakathi, okuvumela ukulinganiswa kwexesha langempela okuqhubekayo ngexesha lokusebenza kwezixhobo zokucwangcisa izixhobo zekhemikhali.
Iimitha ezisekelwe kwiRefractometry
- Ilinganisa isalathisi sokurhawuzelela ukuze iqikelele uxinano lwe-slurry.
- Isebenza kakuhle ekufumaneni utshintsho oluncinci kulwakhiwo lwe-slurry ngenxa yobuthathaka obuphezulu kutshintsho loxinzelelo; iyakwazi ukusombulula utshintsho lwe-<0.1% yobunzima.
- Nangona kunjalo, i-refractive index ibuthathaka kwiinguqu ezingqongileyo ezifana nobushushu, nto leyo eyalela ukuba kulinganiswe ngononophelo kwaye kuhlawulwe ubushushu.
- Isenokuba nokuhambelana okulinganiselweyo kweekhemikhali, ingakumbi kwi-slurry ezibukhali kakhulu okanye ezingacacanga.
Ubungakanani beeParticles njenge-Complement
- Ukufundwa koxinano kunokuphazanyiswa lutshintsho ekusasazweni kobukhulu beentwana okanye ukuhlanganiswa kwazo.
- Ukudibanisa nohlalutyo lobungakanani bezinto ezincinci (umz., ukusasazwa kokukhanya okuguquguqukayo okanye i-electron microscopy) kuyacetyiswa ziindlela ezilungileyo zoshishino, ukuqinisekisa ukuba utshintsho olubonakalayo loxinano alubangelwa kuphela kukuhlanganiswa kwezinto ezincinci.
Izinto ekufuneka ziqwalaselwe kwiimitha zoxinano lweLonnmeter Inline Density
- I-Lonnmeter igxile ekuveliseni iimitha zoxinano olungaphakathi kunye ne-viscosity, ngaphandle kokubonelela ngesoftware exhasayo okanye ukuhlanganiswa kwenkqubo.
- Iimitha zeLonnmeter zinokuchazwa ukuze zikwazi ukumelana ne-slurry ze-CMP ezirhabaxa, ezisebenza ngeekhemikhali kwaye zenzelwe ukufakwa ngokuthe ngqo kwizixhobo zenkqubo ye-semiconductor, ezifanela iimfuno zokulinganisa uxinano lwe-slurry ngexesha langempela.
Xa uphonononga iindlela, gxila kwiikhrayitheriya zesicelo esiphambili: qinisekisa ukuba imitha yoxinano ifikelela kubuntununtunu obufunekayo kunye nokuchaneka, yakhiwe ngezinto ezihambelana nekhemistri yakho yoludaka, imelana nokusebenza okuqhubekayo, kwaye idibana ngokungenamthungo kwimigca yokuhanjiswa koludaka olupholishayo kwinkqubo ye-CMP. Kwishishini le-semiconductor, ukulinganiswa koxinano oluchanekileyo lweludaka kuxhasa ukufana kwe-wafer, isivuno, kunye nomphumo wokuvelisa.
Impembelelo yoLawulo oluSebenzayo loBuninzi beSlurry kwiZiphumo zeCMP
Ulawulo oluchanekileyo loxinano lwe-slurry lubalulekile kwinkqubo yokucwangcisa iikhemikhali. Xa uxinano lugcinwa lufana, ubungakanani bee-abrasive particles ezikhoyo ngexesha lokupolisha buhlala buzinzile. Oku kuchaphazela ngokuthe ngqo izinga lokususwa kwezinto (MRR) kunye nomgangatho womphezulu we-wafer.
Ukunciphisa iziphene zomphezulu weWafer kunye neWIWNU ephuculweyo
Ukugcina uxinano olufanelekileyo lwe-slurry kungqinwe ukuba kunciphisa iziphene zomphezulu we-wafer ezifana nokukrwela okuncinci, ukutyibilika, ukukhukuliseka, kunye nongcoliseko lwamasuntswana. Uphando oluvela ngo-2024 lubonisa ukuba uluhlu loxinano olulawulwayo, oluqhele ukuba phakathi kwe-1 wt% ukuya kwi-5 wt% kwi-colloidal silica-based formulations, luvelisa ibhalansi engcono phakathi kokusebenza kakuhle kokususa kunye nokunciphisa iziphene. Uxinano oluphezulu kakhulu lunyusa ukungqubana okurhabaxa, okukhokelela ekunyukeni kabini ukuya kathathu kwamanani eziphene ngesentimitha yesikwere, njengoko kuqinisekiswe yi-atomic force microscopy kunye ne-ellipsometry analysis. Ulawulo loxinano oluqinileyo lukwaphucula ukungalingani kwe-with-wafer (WIWNU), ukuqinisekisa ukuba izinto zisuswa ngokulinganayo kwi-wafer, nto leyo ebalulekileyo kwizixhobo ze-node semiconductor eziphambili. Uxinano oluhambelanayo lunceda ukuthintela ukuhamba kwenkqubo okunokubeka emngciphekweni iithagethi zobukhulu befilimu okanye ukuthamba.
Ukwandiswa koBude bexesha loBumdaka kunye nokuNcitshiswa kweendleko zezinto ezisetyenziswayo
Iindlela zokulawula uxinano lwe-slurry—kuquka ukujonga ngexesha langempela ngeemitha zoxinano lwe-slurry ze-ultrasonic—zandisa ubomi obuluncedo be-slurry yokupolisha ye-CMP. Ngokuthintela ukugqithiswa kwemitha okanye ukuxutywa okugqithisileyo, izixhobo zokuhlela izixhobo ze-chemical mechanical zifezekisa ukusetyenziswa ngokugqibeleleyo kwezinto ezisetyenziswayo. Le ndlela inciphisa ukuphindaphindwa kokutshintshwa kwe-slurry kwaye ivumela amaqhinga okuphinda kusetyenziswe, inciphisa iindleko zizonke. Umzekelo, kwizicelo ze-slurry zokupolisha ze-CeO₂, ukugcinwa koxinano ngononophelo kuvumela ukulungiswa kwakhona kweebhetshi ze-slurry kwaye kunciphisa umthamo wenkunkuma ngaphandle kokunciphisa ukusebenza. Ulawulo loxinano olusebenzayo luvumela iinjineli zeenkqubo ukuba zibuyisele kwaye zisebenzise kwakhona i-slurry yokupolisha ehlala ngaphakathi kwemida yokusebenza eyamkelekileyo, nto leyo eqhuba ukonga iindleko.
Ukuphuculwa koKuphindaphindwa kunye noLawulo lweNkqubo yokwenziwa kweeNode eziPhambili
Izicelo zanamhlanje zoshishino lwe-semiconductor zifuna ukuphindaphindwa okuphezulu kwinqanaba lokucwangcisa iikhemikhali kunye noomatshini. Kwimveliso yee-node eziphambili, nokuguquguquka okuncinci kuxinano lwe-slurry kunokubangela umahluko ongamkelekanga kwiziphumo ze-wafer. Ukuzenzekelayo kunye nokuhlanganiswa kweemitha zoxinano lwe-slurry ze-inline ultrasonic—ezifana nezo zenziwe yiLonnmeter—zenza kube lula ukuphendula okuqhubekayo, ngexesha langempela lolawulo lwenkqubo. Ezi zixhobo zibonelela ngemilinganiselo echanekileyo kwiindawo ezinzima zeekhemikhali eziqhelekileyo ze-CMP, zixhasa iinkqubo ezivaliweyo eziphendula ngokukhawuleza kwiimpazamo. Ukulinganiswa koxinano oluthembekileyo kuthetha ukufana okukhulu ukusuka kwi-wafer ukuya kwi-wafer kunye nolawulo oluqinileyo kwi-MRR, ebalulekileyo kwimveliso ye-semiconductor ye-sub-7nm. Ukufakwa kwezixhobo ngokufanelekileyo—ukubekwa ngokuchanekileyo kumgca wokuhambisa i-slurry—kunye nokugcinwa rhoqo kubalulekile ukuqinisekisa ukuba iimitha zisebenza ngokuthembekileyo kwaye zibonelela ngedatha ebalulekileyo kuzinzo lwenkqubo.
Ukugcina uxinano olufanelekileyo lwe-slurry kubalulekile ekukhuliseni isivuno semveliso, ukunciphisa iziphene, kunye nokuqinisekisa ukwenziwa okungabizi kakhulu kwiinkqubo ze-CMP.
Imibuzo Ebuzwa Rhoqo (Ii-FAQ)
Yintoni umsebenzi wemitha yoxinano lwe-slurry kwinkqubo yokucwangcisa iikhemikhali?
Imitha yoxinano lwe-slurry idlala indima ebalulekileyo kwinkqubo yokucwangcisa umatshini wekhemikhali ngokulinganisa rhoqo uxinano kunye noxinzelelo lwe-slurry yokupolisha. Umsebenzi wayo oyintloko kukubonelela ngedatha yexesha langempela malunga nebhalansi ye-abrasive kunye neyekhemikhali kwi-slurry, ukuqinisekisa ukuba zombini zingaphakathi kwemida echanekileyo yokucwangcisa i-wafer efanelekileyo. Olu lawulo lwexesha langempela luthintela iziphene ezifana nokukrwela okanye ukususwa kwezinto ezingalinganiyo, eziqhelekileyo kwimixube ye-slurry engaphezulu okanye engaxutywanga kakuhle. Uxinano lwe-slurry oluhlala luhleli lunceda ukugcina ukuphindaphinda kuyo yonke imisebenzi yemveliso, lunciphisa umahluko phakathi kwe-wafer ne-wafer, kwaye luxhasa ukwenziwa ngcono kwenkqubo ngokubangela amanyathelo okulungisa ukuba kufunyenwe ukuphambuka. Kwimveliso ye-semiconductor ephucukileyo kunye nezicelo zokuthembeka okuphezulu, ukujonga okuqhubekayo kunciphisa inkunkuma kwaye kuxhasa amanyathelo okuqinisekisa umgangatho angqongqo.
Kutheni i-CeO₂ polishing slurry ikhethwa kumanyathelo athile okucwangcisa kwishishini le-semiconductor?
I-Cerium oxide (CeO₂) polishing slurry ikhethwa kumanyathelo athile okucwangcisa i-semiconductor ngenxa yokukhetha kwayo okugqwesileyo kunye nobudlelwane bayo beekhemikhali, ngakumbi kwiifilimu zeglasi kunye ne-oxide. Amasuntswana ayo arhabaxa afanayo aphumela ekucwangcisweni komgangatho ophezulu kunye namazinga aphantsi kakhulu eziphene kunye nokukrwela okuncinci komphezulu. Iimpawu zeekhemikhali zeCeO₂ zivumela amazinga okususa azinzileyo naphindaphindwayo, abalulekileyo kwizicelo eziphambili ezifana ne-photonics kunye neesekethe ezidityanisiweyo ezinoxinano oluphezulu. Ukongeza, i-CeO₂ slurry iyamelana nokuhlangana, igcina ukumiswa okuzinzileyo nangona isebenza ixesha elide le-CMP.
Isebenza njani imitha yoxinano lwe-slurry ye-ultrasonic xa ithelekiswa nezinye iintlobo zokulinganisa?
Imitha yobuninzi be-slurry ye-ultrasonic isebenza ngokudlulisa amaza esandi kwi-slurry kunye nokulinganisa isantya kunye nokunciphisa la maza. Ubuninzi be-slurry buchaphazela ngokuthe ngqo indlela amaza ahamba ngayo ngesantya kunye nomlinganiselo wobunzima bawo obuncipha ngawo. Le ndlela yokulinganisa ayiphazamisi kwaye inika idatha yoxinzelelo lwe-slurry ngexesha langempela ngaphandle kokufuna ukwahlula okanye ukuphazamisa ukuhamba kwenkqubo. Iindlela ze-Ultrasonic zibonisa uvakalelo oluncinci kwizinto eziguquguqukayo ezifana nesantya sokuhamba okanye ubungakanani besuntswana xa kuthelekiswa neenkqubo zokulinganisa uxinano lwe-mechanical (ezisekwe kwi-float) okanye i-gravimetric. Kwi-chemical mechanical planarization, oku kuguqulela kwimilinganiselo ethembekileyo, eqinileyo nokuba kwi-slurry enee-particles ezininzi.
Kufuneka zifakwe phi iimitha zoxinano lwe-slurry kwinkqubo ye-CMP?
Iindawo ezifanelekileyo zokufaka imitha yoxinano lwe-slurry kwizixhobo zokucwangcisa izixhobo zekhemikhali ziquka:
- Itanki yokujikeleza amanzi: ukujonga rhoqo uxinano lwe-slurry ngaphambi kokuba isasazwe.
- Ngaphambi kokuba uzise kwindawo yokupolisha: ukuqinisekisa ukuba i-slurry enikiweyo iyahlangabezana neemfuno zoxinano olujoliswe kulo.
- Emva kokuxuba iindawo zodaka: ukuqinisekisa ukuba iibhetshi ezisandula ukulungiswa zihambelana neefomyula ezifunekayo ngaphambi kokuba zingene kwi-process loop.
Ezi ndawo zibalulekileyo zivumela ukufunyanwa nokulungiswa ngokukhawuleza kwanoma yikuphi ukuphambuka ekuxinaniseni kodaka, ukuthintela umgangatho we-wafer obuthathaka kunye nokuphazamiseka kwenkqubo. Ukubekwa kwayo kulawulwa yi-slurry flow dynamics, indlela eqhelekileyo yokuxuba, kunye nesidingo sempendulo ekhawulezileyo kufutshane ne-planarization pad.
Ulawulo oluchanekileyo loxinzelelo lwe-slurry luyiphucula njani indlela esebenza ngayo inkqubo ye-CMP?
Ulawulo oluchanekileyo loxinzelelo lwe-slurry luphucula inkqubo yokucwangcisa iikhemikhali ngokuqinisekisa amazinga okususa afanayo, ukunciphisa ukwahluka kokumelana nephepha, kunye nokunciphisa ukuphindaphindeka kweziphene zomphezulu. Uxinano oluzinzileyo lwe-slurry lwandisa ubomi be-polishing pad kunye ne-wafer ngokuthintela ukusetyenziswa ngokugqithisileyo okanye ukusetyenziswa okungaphantsi. Ikwanciphisa iindleko zenkqubo ngokuphucula ukusetyenziswa kwe-slurry, ukunciphisa ukuphinda kusetyenziswe, kunye nokuxhasa isivuno esiphezulu sezixhobo ze-semiconductor. Ingakumbi kwimveliso ephucukileyo kunye nokwenziwa kwezixhobo ze-quantum, ulawulo oluqinileyo lwe-slurry luxhasa ukuthamba okuphinda kuvele, ukusebenza kombane okuqhubekayo, kunye nokunciphisa ukuvuza kuzo zonke izakhiwo zezixhobo.
Ixesha leposi: Disemba-09-2025
